? ? ? ? guilin strong micro-electronics co.,ltd. gm 817 ( ? bc817) features c npn low frequency amplifier transistor maximum ratings ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?OlO? v ceo 45 v collector-base voltage ?O - O? v cbo 50 v emitter-base voltage lO - O? v ebo 5.0 v collector current continuous ?O - Bm ic 500 ma thermal characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 ?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature] Y??? t j , t stg -55to+150 device marking GM817-16 (bc817-16) =6a;GM817-25 (bc817-25) =6b; GM817-40 (bc817-40) =6c
? ? ? ? guilin strong micro-electronics co.,ltd. gm 817 ( ? bc817) electrical characteristics (t a = 25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? ma x ? unit off characteristics ? collector-emitter breakdown voltage ?OlO? (ic=10ma,i b =0) v (br)ceo 45 v collector-base breakdown voltage ?OO? (ic=10 u a,v eb =0) v (br)cbs 50 v emitter-base breakdown voltage lOO? (i e =1.0 u a,ic=0) v (br)ebo 5.0 v collector cutoff curren t ?O? (v cb =20v) (v cb =20v,t a =150 ) i cbo 100 5.0 na ua on charcteristics ? characteristic ? symbol ? min ? typ ? max ? unit dc current gain ? h fe (i c =100ma,v ce =1.0v) 817-16 817-25 817-40 100 160 250 250 400 600 (i c =500ma,v ce =1.0v) 40 collector-emitter saturation voltage ?O - lO?? (i c =500ma, i b =50ma) v ce(sat) 0.7 v base-emitter saturation voltage O - l O?? (i c =500ma, i b =50ma) v b e(sat) 1.2 v base-emitter voltage O - lO? (i c =500ma, v ce =1.0v) v be(on) 1.2 v small-signal characteristics ? 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina. current-gain-bandwidth product - ?e (i c =10ma,v ce =5.0v,f=100mhz) f t 100 mhz output capacitance ? (v cb =10v, f=1.0mhz) c obo 10 pf
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